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ANALYSIS OF DC CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE
作者姓名:Li  Yao  Zheng  Jiang  Shen  Keqiang  Wei  Tongli
作者单位:Microelectronics Center,Southeast University,Nanjing 210096
摘    要:Based on the analysis of DC characteristics of silicon bipolar transistors at low temperature, DC analytic models of ECL circuit at low temperature are derived, then compared with the experimental data and computer simulation results. The modification of SPICE BJT model about temperature and design of low temperature ECL circuit are discussed.


Analysis of DC characteristics of ECL circuit at low temperature
Li Yao Zheng Jiang Shen Keqiang Wei Tongli.ANALYSIS OF DC CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE[J].Journal of Electronics,1996,13(3):275-283.
Authors:Li Yao  Zheng Jiang  Shen Keqiang  Wei Tongli
Affiliation:(1) Microelectronics Center, Southeast University, 210096 Nanjing
Abstract:Based on the analysis of DC characteristics of silicon bipolar transistors at low temperature, DC analytic models of ECL circuit at low temperature are derived, then compared with the experimental data and computer simulation results. The modification of SPICE BJT model about temperature and design of low temperature ECL circuit are discussed.
Keywords:ECL circuit  Low temperature  DC Characteristics  SPICE
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