Indium arsenide light-emitting diodes with a cavity formed by an anode contact and semiconductor-air interface |
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| Authors: | N V Zotova N D Il’inskaya S A Karandashev B A Matveev M A Remennyi N M Stus’ V V Shustov |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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| Abstract: | Room-temperature spectral characteristics of light-emitting diodes that are based on double InAsSbP/InAs heterostructures with an active InAs layer and a cavity formed by a wide anode contact and the structure surface and that emit near 3.3 µm are considered. The far-field pattern and the mode structure of light-emitting diodes 7.5–45 µm thick are reported, as well as the dependences of the mode position on the pump current. |
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