Study of postgrowth processing in the fabrication of quantum-cascade lasers

The special postgrowth processing of structures for quantum-cascade lasers is studied. The processing includes regrowth with a high-resistivity material (indium phosphide) with a carrier concentration of n ≈ 5 × 10¹⁰ cm^?3, photolithography with various wet chemical etchants, and the fabrication of special contacts providing enhanced heat removal. The use of modified postgrowth processing provides necessary parameters satisfying requirements for high-quality devices.