Semiconductor-insulator structures in the phototargets of vidicons sensitive in the middle infrared region of the spectrum

The kinetics of electronic processes in vidicon phototargets based on semiconductor-insulator structures with a narrow-gap semiconductor is considered taking into account charge drain in the insulator layer and relaxation of the nonequilibrium depletion region in the semiconductor layer. The integration time, threshold sensitivity, and resolution at various intensities of incident radiation are estimated.