| 真空电弧沉积的TiN薄膜表面分析 |
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| 引用本文： | 王浩,邹积岩.真空电弧沉积的TiN薄膜表面分析[J].微细加工技术,1995(1):45-49. |
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| 作者姓名： | 王浩 邹积岩 |
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| 作者单位： | 北京大学重离子物理研究所，华中理工大学电力系 |
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| 摘 要： | 对真空电弧沉积的ＴｉＮ薄膜表面化学组份、组织结构、形貌及库度分布进行了测试与分析。结果表明，薄膜中Ｔｉ、Ｎ两种元素原子比接近１：１，其它杂质元素含量极少，薄膜为ＴｉＮ单相结构，（１１１）晶面择优取向；薄膜表面形貌光滑致密，颗粒含量少；薄膜厚度分布较均匀。
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| 关 键 词： | 表面分析 真空电弧沉积 氮化钛薄膜 |
SURFACE ANALYSIS ON VACUUM ARC DEPOSITED TiN FILM |
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| Wang Hao, Wei Lunchun.SURFACE ANALYSIS ON VACUUM ARC DEPOSITED TiN FILM[J].Microfabrication Technology,1995(1):45-49. |
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| Authors: | Wang Hao Wei Lunchun |
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| Abstract: | Measurement and analysis on vacuum are deposited TiN film,with respect to chemical compound, phase structure, topography and thi ckness distribution of film surface,are presented in this paper. Results show that only Ti and N are fund in the film with atom ratio being 1:1,film structure is TiN single phase stucture with (111) orientation having priority,film surface is smoothly and concentrated well with few particles being incorporated into,and film hickness distribution ls uniform. |
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| Keywords: | TiN film surface analysis vacuum are deposition |
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