| 硅基片微型通孔加工技术 |
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| 引用本文： | 赵钢,褚家如,徐藻. 硅基片微型通孔加工技术[J]. 微细加工技术, 2004, 0(2): 60-65 |
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| 作者姓名： | 赵钢 褚家如 徐藻 |
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| 作者单位： | 中国科学技术大学,精密机械与精密仪器系,合肥,230027 |
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| 基金项目： | 2003年中国科学技术大学青年基金资助项目(KB0910) |
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| 摘 要： | 介绍了硅基片微型通孔的用连及在微机电系统发展中的重要性，从原理、过程、优缺点等方面详细叙述了激光打孔法、湿法刻蚀法、深度反应离子刻蚀法(DRIE）和光辅助电化学刻蚀法(PAECE)等四种硅基片微型通孔的加工方法，并对各种方法进行了比较，提出了各种方法的适用范围。
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| 关 键 词： | 微型通孔 微机电系统 深度反应离子刻蚀法 光辅助电化学刻蚀法 |
| 文章编号： | 1003-8213(2004)02-0060-06 |
| 修稿时间： | 2004-03-02 |
Fabrication Technology of Micro Through-hole on Silicon Wafer |
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| ZHAO Gang,CHU Jia-ru,XU Zao. Fabrication Technology of Micro Through-hole on Silicon Wafer[J]. Microfabrication Technology, 2004, 0(2): 60-65 |
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| Authors: | ZHAO Gang CHU Jia-ru XU Zao |
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| Abstract: | The functions and applications of micro through-hole on silicon wafer, as well as its importance in the development of MEMS, are introduced. The main four fabrication techniques, namely laser drilling, wet etching, DRIE (deep reactive ion etching) and PAECE (photo assisted electro-chemical etching), are described in detail from the several aspects of principle, process, advantages and disadvantages. After comparing the techniques, their applying fields are given. |
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| Keywords: | micro through-hole MEMS DRIE PAECE |
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