金纳米粒子作掩模的硅纳米柱阵列的加工

利用自组装的方法在硅基片表面形成一层均匀的金纳米粒子掩模,分析了偶联剂对自组装的影响,以金纳米粒子作掩模进行反应离子刻蚀,研究了刻蚀时间对硅纳米柱阵列的影响,提供了一种简单、便宜并且有效的在硅基底上大面积形成纳米柱阵列的纳米加工方法。实验中发现,超过一定刻蚀时间时,有过刻蚀现象发生,在120 s刻蚀时间下,得到了直径小于20 nm,深宽比高达10∶1以上规则、致密、大面积分布的硅纳米柱或硅纳米锥状结构。

Preparation of Silicon Nanopillars Array Using Gold Nanoparticles as Etching Mask

The regular and uniform nanopillar arrays exhibit potential applications for nano-devices.The uniform gold nano-particle monolayer is formed on silicon substrate by self-assembly and the silicon nanopillar arrays were fabricated by reactive ion etching using gold nano-particles monolayer as etching mask,and the influence of the etch time on the silicon nanopillar arrays was investigated.If the etch time is too long,the over-etching is produced.When the time is less than 120 s,a large area silicon nanopillar or nanocone array can be obtained which their diameter is less than 20 nm and their aspect ratio is larger than 10.The results provide a simple,economic and effective method for fabrication of uniform nanopillar arrays on silicon substrate.