国产pnp双极晶体管在宽总剂量范围辐照下的ELDRS

研究了不同偏置条件下国产商用pnp型双极晶体管在宽总剂量范围内的辐射损伤特性和变化规律.实验结果表明,在100 rad(Si)/s和0.01 rad(Si)/s剂量率辐照下,总累计剂量达到200 krad (Si)时,这一宽总剂量范围内辐射损伤趋势均随着总剂量值不断累积而增大,且并未出现饱和.相同剂量率辐照下,发射结施加反偏状态时国产商用pnp双极晶体管的过剩基极电流变化最大,正偏下最小,零偏介于二者之间.两款晶体管均表现出明显的低剂量率损伤增强效应(ELDRS),且在反偏下ELDRS更显著.并对出现这一实验结果的损伤机理进行了探讨.

ELDRS for Domestic pnp Bipolar Transistor Under Irradiation in a Wide Range of Total Dose

The radiation damage characteristics and variation rules of domestic commercial pnp bipolar transistor in a wide range of total dose were investigated under different bias conditions. The experimental results show that the radiation damage increases with the dose accumulation at 100 rad(Si)/s and 0.01 rad(Si)/s dose rate in a wide range of total dose, and there is no saturation until the total ionizing dose of 200 krad (Si). Under the same dose rate, the variations of the excess base current is larger at reverse bias for base-emitter junction,smaller under forward bias and moderate under zero bias. Both the two types of transistors exhibit enhanced low dose rate sensitivity (ELDRS) obviously and the ELDRS is more significant at reverse bias. Additionally, the damage mechanism of the experimental results was discussed.