| 氧化硅在改善双极型晶体管特性上的作用 |
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| 引用本文： | 王友彬,汪辉.氧化硅在改善双极型晶体管特性上的作用[J].半导体技术,2008,33(2):144-146. |
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| 作者姓名： | 王友彬 汪辉 |
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| 作者单位： | 上海交通大学,微电子学院,200030 |
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| 摘 要： | 提出了一种改善npn和横向pnp晶体管放大倍数、扩散致窄电阻(受EB和CB结结深影响的基区电阻)阻值而又不影响其他器件特性的方法.不连续的SiOx可以作为宽禁带半导体材料加在多晶硅和单晶硅的界面处来提高横向pnp晶体管的放大倍数,使其从目前的23提高到30;连续的SiOx作为优秀的绝缘材料覆盖在发射极多晶硅表面,可以确保As在快速热处理后的分布,结果表明npn型晶体管的放大倍数从170降低到110的同时增加了扩散致窄电阻的阻值.这种方法的优点在于利用了极易制造的SiOx改善了半导体器件特性,具有极高的实际应用价值.
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| 关 键 词： | 氧化硅 双极型晶体管 放大倍数 |
| 文章编号： | 1003-353X（2008）2-0144-03 |
| 收稿时间： | 2007-09-25 |
| 修稿时间： | 2007年9月25日 |
Effects of SiO_x in the Improvement of BJT Characteristics |
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| Wang Youbin,Wang Hui.Effects of SiO_x in the Improvement of BJT Characteristics[J].Semiconductor Technology,2008,33(2):144-146. |
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| Authors: | Wang Youbin Wang Hui |
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| Affiliation: | Wang Youbin,Wang Hui (School of Microelectronics,Shanghai Jiao Tong University,Shanghai 200030,China) |
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| Abstract: | A way to improve the gain of npn and lateral pnp transistors was presented,the value of pinch resistor(a base resistor adjusted by EB and CB junction) has no influence on other devices.Non-continuous SiOx,a wide band gap semiconductor material,was inserted between base poly and Si to improve the gain of lateral pnp,and results show that lateral pnp gain is enhanced from 23 to 30.Continuous SiOx,an excellent insulation material,was added to the surface of emitter to ensure the distribution of As after anneal... |
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| Keywords: | SiOx bipolar transistor gain |
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