抛光工艺对硅片表面Haze值的影响

随着超大规模集成电路的快速发展,硅片表面的Haze值对于现代半导体器件工艺的影响也越来越受到人们的重视.通过实验研究了精抛光工艺参数对硅片表面Haze值的影响规律.结果表明,随着抛光时间的延长,硅的去除量逐渐增大,硅片表面Haze值逐渐降低;同时抛光过程中机械作用与化学作用的协同作用对Haze值也有较大影响.随着抛光液温度的降低与抛光液体积流量的减小,化学作用减弱,硅片表面Haze值逐渐减小.而随着抛光压力的增大,机械作用逐渐起主导作用,硅片表面Haze值逐渐降低.但当Haze值降低到某一数值后,随着硅去除量的增大、抛光液温度的下降、抛光液体积流量的降低、抛光压力的增大,硅片表面的Haze值基本保持不变.

Influence of Polishing Process on Silicon Wafer Surface Haze Value

With the rapid development of ultra large scale integrated circuit,the effect of the Haze value of the silicon wafer surface on the modern semiconductor devices process has drawn more and more attention.The influence of final CMP process parameters on the Haze value of the silicon wafer surface was studied.The results show that with the increase of polishing time,the silicon removal increases,then the Haze value of the silicon wafer surface becomes less.And the status of cooperation between chemical polishing and mechanical polishing also has a strong effect on the Haze value.With the decrease of slurry temperature and slurry volume flow,the chemical action is weakened in the CMP,which results in the reduce of Haze value of the silicon wafer surface.When the mechanical action plays a leading role with the rise of polishing pressure,the Haze value of the silicon wafer surface gradually decreases.However,when the Haze value of the silicon wafer surface drops to a certain value,it remains essentially unchanged with change of the silicon removal,slurry temperature,slurry volume flow and polishing pressure in the CMP.