氮化镓化学机械抛光中抛光液的研究进展

氮化镓(GaN)因具有耐酸碱、硬度大等特点使其难以进行精密加工。因此,高效实现GaN的化学机械抛光(CMP)成为了一个技术难题。CMP过程中,抛光液的组分及其性质对抛光效果起决定性的作用。对近年来应用于GaN CMP抛光液中的磨料、氧化剂、表面活性剂、光催化剂等重要组分的抛光效果及作用机理进行了回顾。主要可以归纳为磨料逐渐从单一磨料向复合磨料方向发展,阴离子表面活性剂较其他活性剂效果更好;同时,发现主流的GaN CMP过程为先氧化再去除,因此氧化剂和光催化剂逐渐成为了研究热点。最后对GaN CMP的未来研究方向进行了展望。

Research Progress of Slurry in Chemical Mechanical Polishing of Gallium Nitride

Gallium nitride(GaN)is difficult to process precisely because of its acid and alkali resistance and high hardness.Therefore,it has become a technical problem to efficiently realize chemical mechanical polishing(CMP)of GaN.The components and properties of slurry play a decisive role in the polishing effect during the CMP process.Polishing effects and action mechanisms of important components such as abrasives,oxidizers,surfactants and photocatalysts used in GaN CMP slurries in recent years are reviewed.It can be summarized that the abrasive gradually develops from the single abrasive to the compound abrasive,and anionic surfactants are more effective than other surfactants.Meanwhile,it is found that the mainstream GaN CMP process is oxidation before removal,so oxidizers and photocatalysts gradually become a hot spot for research.Finally,the future research directions of GaN CMP are prospected.