808nm无Al量子阱激光器mini阵列的研制

通过分析激光器的结构,优化设计了非对称宽波导激光器结构及外延生长条件。利用低压金属有机化合物气相淀积技术(LP-MOCVD)生长了高质量的InGaAsP/GaInP无铝应变量子阱外延材料,制作成808 nm高功率半导体激光器mini阵列,将其应用到1 064 nm全固态激光器中。20℃下,制作的808 nm,0.5 cm半导体激光器mini阵列,连续驱动电流50 A时输出功率达到50 W,最高光电转换效率达到53%。将该808 nm激光器mini阵列应用到全固态1 064 nm激光模组中,50 W,1 064 nm激光输出时,工作电流只有15 A。经过多于500 h老化以后,1 064 nm全固态激光器的功率衰减小于2%。

Study on the Fabrication and Characteristics of the 808 nm Al-Free Quantum Well Laser Mini Bar

Based on the analysis of the laser diode structure,an asymmetric structure was designed and the MOCVD growth condition was also optimized.By LP-MOCVD,high quality InGaAsP/GaInP Al-free strained quantum well laser diode structure was grown and high power 808 nm laser mini bar was fabricated which was used for pumping 1 064 nm laser.At 20 ℃,the mini bar had an output power of 50 W at 50 A and a maxed wall-plug efficiency of 53%.For pumping 1 064 nm solid state laser,when the 1 064 nm laser output power is 50 W,the operation current is 15 A.and after burning in over 500 hours,the degradation of the power is lower than 2%.