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四探针和EIT测试微区薄层电阻的研究与进展
引用本文:谢辉,刘新福,贾科进,闫德立,田建来.四探针和EIT测试微区薄层电阻的研究与进展[J].半导体技术,2007,32(5):369-373.
作者姓名:谢辉  刘新福  贾科进  闫德立  田建来
作者单位:河北工业大学,信息工程学院,天津,300130;河北工业大学,机械工程学院,天津,300130;石家庄市铁道学院,计算机科学与技术系,石家庄,050043
基金项目:河北省教育厅科技计划支持项目(2006449);河北省科学技术研究与发展指导性计划支持项目(06213544)
摘    要:论述了一种测试大型硅片电阻率均匀性的新方法——电阻抗成像技术(EIT)。给出了四探针的基本原理,指出EIT的基本思想来源于四探针技术。对EIT的基本原理和重建算法在理论上进行了描述.提出可将其应用于微区薄层电阻测试,并对EIT在大型硅片微区薄层电阻率均匀性测试技术上的系统应用做了进一步探索。

关 键 词:四探针法  电阻抗成像  微区薄层电阻
文章编号:1003-353X(2007)05-369-05
修稿时间:2006-11-07

R&D on the Technique for Determining the Resistivity of Micro Areas Sheet Based on Four-Point Probe and EIT
XIE Hui,LIU Xin-fu,JIA Ke-jin,YAN De-li,TIAN Jian-lai.R&D on the Technique for Determining the Resistivity of Micro Areas Sheet Based on Four-Point Probe and EIT[J].Semiconductor Technology,2007,32(5):369-373.
Authors:XIE Hui  LIU Xin-fu  JIA Ke-jin  YAN De-li  TIAN Jian-lai
Affiliation:1 a. School of Information Engineering ; 1b. School of Mechanieal Engineering , Hebei University of Technology, Tianfin 300130, China; 2. Computer Science and Technology Department, Shijiazhnang Railway Institute, Shifiazhnang 050043, China
Abstract:A new method:electrical impedance tomography(EIT) is described for determining the distribution of resistivity of semiconductor wafers and thin conducting films.The principle of the four-point probe measurement is reviewed,and it is pointed out that the technique of EIT is grown from an extension of the four-point probe measurement.The basic theory of EIT and reconstruction algorithm are introduced,and it is proposed that it can be applied to measure micro area sheet resistivity.And the designing of EIT system applied for determining the distribution of resistivity of semiconductor wafers and thin conducting films are explored.
Keywords:four-point probe methods  EIT  sheer resistance
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