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铜互连线内电流拥挤效应的影响
引用本文:任韬,翁妍,徐洁晶,汪辉.铜互连线内电流拥挤效应的影响[J].半导体技术,2007,32(5):378-381.
作者姓名:任韬  翁妍  徐洁晶  汪辉
作者单位:上海交通大学,微电子学院,上海,200030
基金项目:国家自然科学基金 , 上海市浦江人才计划
摘    要:提出了一种新的测试结构(S结构),通过实验、理论推导和有限元分析,研究了铜与TaN扩散阻挡层界面的电流拥挤效应对电迁移致质量输运特性的影响.实验和有限元分析表明,铜互连线内由于电流拥挤效应的存在,在用户温度下沿特定通道输运的局部原子通量显著增大,而焦耳热所产生的温度梯度对原子通量和通量散度增大的影响则相对有限.

关 键 词:铜互连  电流拥挤  电迁移  质量输运  有限元分析  铜互连线  电流拥挤效应  影响  Interconnects  Crowding  Current  有限元分析  通量散度  温度梯度  焦耳热  原子  局部  输运特性  通道  用户  存在  分析表  质量  电迁移  层界面
文章编号:1003-353X(2007)05-378-04
修稿时间:2006-12-15

Influence of Current Crowding for Cu Interconnects
REN Tao,WENG Yan,XU jie-jing,WANG Hui.Influence of Current Crowding for Cu Interconnects[J].Semiconductor Technology,2007,32(5):378-381.
Authors:REN Tao  WENG Yan  XU jie-jing  WANG Hui
Affiliation:School of Microelectronics, Shanghai Jiao Tong University, Shanghai 200030, China
Abstract:A slit-test structure was designed to structurally induce and accelerate current crowding in Cu damascene lines.Electromigration (EM) experiments,theoretical calculation and quantitative finite element analysis were applied to study the impact of current crowding on EM-induced mass transport along damascene Cu wires on the interface between Cu/TaN barrier layers.Experiments and quantitative finite element analysis demonstrates local atomic flux is enhanced by current crowding effect remarkably along critical diffusion paths in situ;at the same time,atomic flux and flux divergence is enhanced relatively limitedly by Joule-heating induced temperature gradients.
Keywords:Cu interconnects  current crowding  electromigration  mass transport  finite element analysis
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