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高掺杂浓度Yb∶YAG晶体的生长及光谱性能
引用本文:徐晓东,赵志伟,宋平新,周国清,邓佩珍,徐军.高掺杂浓度Yb∶YAG晶体的生长及光谱性能[J].中国激光,2004,31(8):955-958.
作者姓名:徐晓东  赵志伟  宋平新  周国清  邓佩珍  徐军
作者单位:中国科学院上海光学精密机械研究所,上海,201800
基金项目:国家 8 6 3计划 (2 0 0 2AA3110 30 )资助项目
摘    要:应用中频感应提拉法生长了掺杂浓度高达 5 0at. %的Yb∶YAG晶体 ,研究了室温下Yb∶YAG晶体的吸收和发射光谱特性以及荧光寿命 ,在 939nm和 96 9nm处存在Yb3 + 离子的 2个吸收带 ,能与InGaAs激光二极管(LD)有效耦合 ,适合激光管二极抽运。其荧光主峰位于 10 32nm附近 ,Yb∶YAG晶体的荧光寿命为 390 μs。比较了高掺杂与低掺杂Yb∶YAG晶体的光谱参数 ,指出高掺杂Yb∶YAG晶体是一种很有前景的高功率激光增益介质

关 键 词:材料  Yb∶YAG晶体  提拉法  晶体生长  光谱特性
收稿时间:2003/5/13

Growth of High Doping Yb∶YAG Crystal and Its Spectral Performance
XU Xiao dong,ZHAO Zhi wei,SONG Ping xin,ZHOU Guo qing,DENG Pei zhen,XU Jun.Growth of High Doping Yb∶YAG Crystal and Its Spectral Performance[J].Chinese Journal of Lasers,2004,31(8):955-958.
Authors:XU Xiao dong  ZHAO Zhi wei  SONG Ping xin  ZHOU Guo qing  DENG Pei zhen  XU Jun
Abstract:Yb∶YAG (Yb∶Y3Al5O12) crystal with Yb3+ doping level up to 50 at.-% has been grown by Czochralski method. The absorption, emission spectra and fluorescence lifetime of Yb∶YAG crystal at room temperature have also been studied. Two absorption bands are centered at 939 nm and 969 nm of Yb3+, respectively, which are suitable for InGaAs diode laser pumping, and the main fluorescence band is located around 1032 nm. The fluorescence lifetime of Yb∶YAG laser crystal is 390 μs. The spectral parameters of low and high doping Yb∶YAG crystals are compared. The results indicate that Yb∶YAG with high doping concentration is a promising laser material for high power laser output.
Keywords:materials  Yb∶YAG crystal  Czochralski method  crystal growth  spectral performance
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