1.3μm高增益偏振无关应变量子阱半导体光放大器

采用低压金属有机化学气相外延法 (LP MOVPE)生长并制作了 1 3μm脊型波导结构偏振无关半导体光放大器 (SOA) ,有源区为基于四个压应变量子阱和三个张应变量子阱交替生长的混合应变量子阱 (4C3T)结构 ,压应变阱宽为 6nm ,应变量 1 0 % ,张应变阱宽为 11nm ,应变量 - 0 95 % ;器件制作成 7°斜腔结构以有效抑制腔面反射。半导体光放大器腔面蒸镀Ti3 O5/Al2 O3 减反 (AR)膜以进一步降低腔面剩余反射率至 3× 10 -4以下 ;在 2 0 0mA驱动电流下 ,光放大器放大的自发辐射 (ASE)谱的 3dB带宽大于 5 0nm ,光谱波动小于 0 4dB ,半导体光放大器管芯的小信号增益近 30dB ,在 12 80～ 1340nm波长范围内偏振灵敏度小于 0 6dB ,饱和输出功率大于 10dBm ,噪声指数 (NF)为 7 5dB。

1.3 μm High-Gain Polarization-Insensitive Strained Quantum-Well Semiconductor Optical Amplifier

A polarization-insensitive multiple-quantum-well optical amplifier for 1.3 μm wavelength employing both four compressively-strained wells (1.0% strain, 6 nm well width) and three tensile-strained wells (-0.95% strain, 11 nm well width) in active region was grown by low pressure metalorganic vapor phase epitaxy (LP-MOVPE). The amplifier was fabricated forming ridge waveguide structure with 7° tilted cavity. The two facets were coated with two layers Ti3O5/Al2O3 anti-reflection (AR) thin films, residual facet reflectivity was found to be less than 3×10-4. The 3-dB bandwidth of the amplified spontaneous emission (ASE) spectra was above 50 nm and the amplitude of the optical power ripple was bellow 0.4 dB. The amplifier exhibited an excellent polarization insensitivity (less than 0.6 dB) over the entire range of wavelength (1.28～1.34 μm). A small signal gain of 30 dB and a saturated output power of more than 10 dBm at bias current of 200 mA and 1305 nm wavelength were obtained. The noise figure of the amplifier was 7.5 dB.