| 增强腔在大失谐原子光刻中的应用 |
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| 引用本文： | 曾庆林,蔡惟泉,霍芸生,王育竹.增强腔在大失谐原子光刻中的应用[J].中国激光,2001,28(9):783-785. |
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| 作者姓名： | 曾庆林 蔡惟泉 霍芸生 王育竹 |
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| 作者单位： | 中国科学院上海光机所量子光学开放实验室 上海201800
(曾庆林，蔡惟泉，霍芸生)，中国科学院上海光机所量子光学开放实验室 上海201800(王育竹) |
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| 基金项目： | 国家自然科学基金 (批准号 :696780 09，19774 0 60 )，上海市科学技术发展基金 (批准号:97JC14 0 0 2 )资助课题 |
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| 摘 要： | 对增强腔在大失谐光场原子光刻中的实现进行了详细的讨论 ,通过增强腔对激光光束的压缩和功率的增强可达到近共振原子光刻的要求。数值结果显示相对于近共振原子刻印结果 ,在增强腔下光束中心处沉积的原子条纹宽度将更细 ,为原子刻印提供了一种实现条纹精细度较高的新型方案。
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| 关 键 词： | 大失谐光场 原子光刻 增强腔 |
| 收稿时间： | 2000/6/22 |
Application of Enhanced Cavity in Far Detuning Atom-lithography |
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| ZENG Qing-lin,CAI Wei-quan,HUO Yun-sheng,WANG Yu-zhu.Application of Enhanced Cavity in Far Detuning Atom-lithography[J].Chinese Journal of Lasers,2001,28(9):783-785. |
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| Authors: | ZENG Qing-lin CAI Wei-quan HUO Yun-sheng WANG Yu-zhu |
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| Abstract: | In this paper an application of the enhanced cavity in far detuning atom-lithography has been discussed. By reducing the Guassian beam waist and increasing laser power in the cavity, the requirement for the near resonant atom-lithography can be met. The numerical result shows that the FMHW of the lines deposited on the substrate at the centre of the laser beam in far detuning atom-lithography is much less than that in near resonant atom-lithography under the same angle deviation. So the enhanced cavity provides an approach to the atom-lithography. |
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| Keywords: | far detuning atom-lithography enhanced cavity |
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