| MOVPE生长1.3 μm无致冷AlGaInAs/InP应变补偿量子阱激光器研究 |
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| 引用本文： | 马宏,易新建,金锦炎,杨新民,李同宁.MOVPE生长1.3 μm无致冷AlGaInAs/InP应变补偿量子阱激光器研究[J].中国激光,2002,29(3):193-196. |
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| 作者姓名： | 马宏 易新建 金锦炎 杨新民 李同宁 |
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| 作者单位： | 1. 华中科技大学激光技术国家重点实验室,湖北武汉,430074
2. 武汉邮电科学研究院国家光电子工艺中心武汉分部,湖北武汉,430074 |
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| 基金项目： | 国家高技术 86 3 30 7主题资助项目 (课题编号为 86 3 30 7 11 1(0 2 ) ) |
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| 摘 要： | 通过低压金属有机化学气相外延 (LP MOVPE)工艺生长了AlGaInAs应变补偿量子阱材料 ,通过X射线双晶衍射、光荧光、二次离子质谱的测试分析得到了材料生长的优化工艺参数 ,降低了材料中的氧杂质含量 ,得到了高质量AlGaInAs应变补偿量子阱材料 ,室温光致发光半宽FWHM =2 6meV。采用此外延材料成功制作了 1 3μm无致冷AlGaInAs应变量子阱激光器 ,器件测试结果为 :激射波长 :12 90nm≤ λ≤ 1330nm ;阈值电流 :Ith(2 5℃ )≤15mA ;Ith(85℃ )≤ 2 5mA ;量子效率变化 :Δηex(2 5～ 85℃ )≤ 1 0dB。
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| 关 键 词： | AlGaInAs 应变补偿量子阱 低压金属有机化学气相外延 无致冷 |
| 收稿时间： | 2000/11/29 |
Study on MOVPE Growth of 1.3 μm Uncooled AlGaInAs/InP Strain-compensated Quantum Well Lasers |
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| MA Hong ,YI Xin-jian ,JIN Jin-yan ,YANG Xin-min ,LI Tong-ning.Study on MOVPE Growth of 1.3 μm Uncooled AlGaInAs/InP Strain-compensated Quantum Well Lasers[J].Chinese Journal of Lasers,2002,29(3):193-196. |
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| Authors: | MA Hong YI Xin-jian JIN Jin-yan YANG Xin-min LI Tong-ning |
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| Affiliation: | MA Hong 1,YI Xin-jian 1,JIN Jin-yan 2,YANG Xin-min 2,LI Tong-ning 2 |
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| Abstract: | AlGaInAs strain-compensated quantum wells have been grown by LP-MOVPE. By X-ray diffraction, photoluminescence and SIMS, the properties of the materials and the oxygen concentration in AlGaInAs materials are analyzed. A high quality (PL FWHM=26 meV: room temperature) AlGaInAs strain-compensated quantum well through optimized MOVPE process is obtained. By the wafers, the 1.3 μm uncooled AlGaInAs strain-compensated quantum well lasers have been fabricated. The results of the laser chips are: 1290 nm≤λ≤1330 nm, I th(25℃)≤15 mA, I th(85℃)≤25 mA and Δη ex(25～85℃)≤1.0 dB. |
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| Keywords: | AlGaInAs strain-compensated quantum well LP-MOVPE uncooled |
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