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激光干涉结晶法制备三维有序分布的nc-Si阵列
引用本文:王晓伟,王立,马忠元,鲍云,徐骏,黄信凡,陈坤基.激光干涉结晶法制备三维有序分布的nc-Si阵列[J].中国激光,2002,29(4):363-365.
作者姓名:王晓伟  王立  马忠元  鲍云  徐骏  黄信凡  陈坤基
作者单位:南京大学物理系,固体微结构物理国家重点实验室,江苏南京,210093
基金项目:国家自然科学基金 (编号 :6 9890 2 2 5 ,6 9876 0 19,6 0 0 710 19)资助项目
摘    要:利用准分子激光干涉结晶法使a Si∶H/a SiNx∶H多层膜中的超薄a Si∶H层定域晶化 ,成功地制备出三维有序分布的nc Si阵列。原子力显微镜 (AFM )、微区拉曼 (micro Raman)光谱及剖面透射电子显微镜 (X TEM)的分析结果揭示在晶化薄膜中已形成平均尺寸约为 3 6nm ,横向周期 2 μm ,纵向周期与a Si∶H/a SiNx∶H多层膜周期 (14nm)相等的nc Si阵列。

关 键 词:激光晶化  纳米硅  微结构  移相光栅
收稿时间:2001/1/20

Fabrication of the Three-dimensional Ordered nc-Si Array Made by Pulsed Laser Interference Crystallization
WANG Xiao-wei,WANG Li,MA Zhong-yuan,BAO Yun,XU Jun,HUANG Xin-fan,CHEN Kunji.Fabrication of the Three-dimensional Ordered nc-Si Array Made by Pulsed Laser Interference Crystallization[J].Chinese Journal of Lasers,2002,29(4):363-365.
Authors:WANG Xiao-wei  WANG Li  MA Zhong-yuan  BAO Yun  XU Jun  HUANG Xin-fan  CHEN Kunji
Abstract:A new method of phase-modulated excimer laser crystallization to fabricate the three-dimensional nc-Si array within the a-Si∶H/a-SiN x∶H multilayers (MLs) is adopted. The results of atomic force microscopy (AFM), micro-Raman measurements and cross-section transmission electron microscopy (X-TEM) demonstrated that the crystallized sample shows a three-dimensional ordered structure of nc-Si with the average size of about 3.6 nm, which has longitudinal order with 14 nm periodicity confined by SiN x sublayers in the MLs, and lateral order with 2 μm periodicity by patterned local crystallization.
Keywords:laser crystallization  nanocrystal-Si  micro-structures  phase shifting grating
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