高亮度半导体激光器腔面膜的研究

要降低半导体激光器阈值电流密度和提高外微分量子效率,其中采取的主要方法之一是在发光芯片的两个端面选取适当的能量反射比。根据光学薄膜的设计理论,优化膜系结构,并采用电子束离子辅助蒸发技术,选取合适的薄膜材料,在条宽100 μm,腔长1 mm的850 nm半导体激光器发光芯片的两个端面沉积光学介质膜。其作用不仅获得一定的光谱特性,而且可以使发光腔面钝化。经过反复实验优化薄膜沉积的工艺参量,可以减少膜层材料的吸收,提高膜层的激光损伤阈值。经测试采用此方法制作出的高亮度半导体激光器使用寿命明显提高,发光芯片的输出功率可达3.7 W,与未镀膜的器件相比功率提高了2.8～3.1倍。

Study of High-Luminescence Semiconductor Laser′s Film

One major method to decrease threshold current density of the semiconductor laser and enhance the deferential exterior of the quantum-efficiency is choosing desirable reflectance of light on both ends of light-emitting chip. This paper provides the contents of optimizing coating system based on optical thin film design theories. The design of optical thin film is prepared with desirable materials, assisted with electron-beam evaporation technology. The optical dielectric film was deposited on two end surfaces of light-emitting chip which has 100 μm stripe width and 1mm length in semiconductor laser. Through the process, it obtains the specific properties of optical spectrum as well as obtuse light emitting vertical cavity surface. It decreases material absorption and enhances laser damage thresholds through optimizing parameters of optical film deposition. After testing, the output power of the high-luminous semiconductor laser′s luminous CMOS chip is improved to 3.7 W. The power has been raised by 2.8 to 3.1 times than the uncoated apparatus.