| Preparation of a new gate dielectric material HfTiON film |
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| 作者姓名： | YU Guo-yi ZOU Xue-cheng CHEN Wei-bing |
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| 作者单位： | YU Guo-yi，ZOU Xue-cheng，CHEN Wei-bing Department of Electronic Science and Technology，Huazhong University of Science and Technology，Wuhan 430074，China |
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| 摘 要： | A new gate dielectric material HfTiON is deposited by reactive co-sputtering of Hf and Ti targets in N2/O2 ambient, followed by annealing in N2 at 600 ℃ and 800 ℃ respectively for 2 min. Capacitance-voltage and gate-leakage properties are characterized and compared for different anneal conditions. The results indicate that the sample annealed at 800 ℃ exhibits lower interface-state and oxide-charge densities, and better device reliability. This is attributed to the fact that the rapid thermal annealing at the higher temperature of 800 ℃ can effectively remove the damage-induced precipitation, forming a hardened dielectric/Si interface with high reliability.
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| 收稿时间： | 12 October 2006 |
Preparation of a new gate dielectric material HfTiON film |
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| YU Guo-yi,ZOU Xue-cheng,CHEN Wei-bing.Preparation of a new gate dielectric material HfTiON film[J].The Journal of China Universities of Posts and Telecommunications,2007,14(1):77-79. |
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| Authors: | YU Guo-yi ZOU Xue-cheng CHEN Wei-bing |
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| Affiliation: | Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China |
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| Abstract: | A new gate dielectric material HfTiON is deposited by reactive co-sputtering of Hf and Ti targets in N2/O2 ambient,followed by annealing in N2 at 600℃ and 800℃ respectively for 2 min. Capacitance-voltage and gate-leakage properties are characterized and compared for different anneal conditions. The results indicate that the sample annealed at 800 ℃ exhibits lower interface-state and oxide-charge densities, and better device reliability. This is attributed to the fact that the rapid thermal annealing at the higher temperature of 800 ℃ can effectively remove the damage-induced precipitation, forming a hardened dielectric/Si interface with high reliability. |
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| Keywords: | HtTiON high-k gate dielectric interface reactive co-sputtering gate leakage current |
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