Remote plasma nitridation, deuterium anneal and pocket implant effects on NMOS hot carrier reliability |
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Authors: | Shian Aur Tad Grider Vincent McNeil Tom Holloway Robert Eklund |
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Affiliation: | Silicon Technology Development, Texas Instruments, P.O. Box 650311, MS 3702, Dallas, TX 75265, USA |
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Abstract: | There are several advanced processes which are being actively studied as candidates for sub-0.25 μm technology. This paper studies the effects on NMOS hot carrier reliability from remote plasma nitrided oxide (RPNO), deuterium anneal and pocket implant. It is found that RPNO will not affect the SiO2/Si interface. The hot carrier reliability is better for the same device channel current. This is due to making the effective oxide thickness thinner and achieving the same drive current with longer channel length. The deuterium anneal can improve the hot carrier reliability, even with nitride sidewall, if proper annealing is done. While the pocket implant can reduce short channel effects, the hot carrier lifetime is degraded unless optimization is done. |
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