A nanoscale nonvolatile memory device made from RbAg4I5 solid electrolyte grown on a Si substrate |
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| Authors: | XF Liang B Yang ZG Liu |
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| Affiliation: | a National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People’s Republic of China
b Department of Mechanical and Aerospace Engineering, California NanoSystems Institute, University of California, Los Angeles, California 90095, USA |
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| Abstract: | A nanoscale nonvolatile memory device made from RbAg4I5 solid electrolyte has been made directly on a Si substrate with lateral size scaled down to 100 nm. By applying voltages with different polarity, the device could be switched between high- and low-resistance states. The ratio between the high and low resistances could reach ∼103, and the low-resistance state showed rectifying diode characteristics. The configured resistances remained nonvolatile after switching, and the device could be switched repeatedly for ∼103 times. Our results show that the nanoscale nonvolatile memory device can be integrated directly with Si-based circuit and can be potentially used for high-density memory application. |
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| Keywords: | Bistable state Electric switching Solid electrolyte Pulsed laser deposition |
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