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Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material |
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| Authors: | Bo Liu Zhitang Song Bomy Chen |
| Affiliation: | a Research Center of Functional Semiconductor Film Engineering and Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China b Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA |
| Abstract: | Phase-change nonvolatile memory cell elements composed of Sb2Te3 chalcogenide have been fabricated by using the focused ion beam method. The contact size between the Sb2Te3 phase change film and electrode film in the cell element is 2826 nm2 (diameter: 60 nm). The thickness of the Sb2Te3 chalcogenide film is 40 nm. The threshold switching current of about 0.1 mA was obtained. A RESET pulse width as short as 5 ns and the SET pulse width as short as 22 ns for Sb2Te3 chalcogenide can be obtained. At least 1000 cycle times with a RESET/SET resistance ratio >30 times is achieved for Sb2Te3 chalcogenide C-RAM cell element. |
| Keywords: | Sb2Te3 Nano-cell-element Current-voltage characteristics Chalcogenide random access memory |
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