适于器件及电路分析的全耗尽短沟道LDD／LDSSOI MOSFET器件模型

本文系统描述了全耗尽短沟道ＬＤＤ／ＬＤＳＳＯＩＭＯＳＦＥＴ器件模型的电压电压特性。该模型扩展了我们原有的薄膜全耗尽ＳＯＩＭＯＳＦＥＴ模型，文中着重分析了器件进入饱和区后出现的沟道长度调制效应，及由于ＬＤＤ／ＬＤＳ区的存在对本征ＭＯＳ器件电流特性的影响。

A Fully Depleted Short-Channel SOI LDD/LDS MOSFET Model for VLSI Circuits Analysis

A physical model for the fully depleted short-channel LDD/LDS SOI MOSFET model is developed, which expands our previous thin-film SOI MOSFET model, focusing on channel-length modulation when the SOI MOSFET operates in the saturation region, and the influences of LDD/LDS structure on primary SOI MOSFET I-V characteristics. Our model has a good agreement with experimental results. Moreover, the model describes primary MOSFET model and LDD/LDS structure' s effects seperately with simple formula and easy parameters' extraction,which facilitates the implemetaion of this model into circuit simulators such as SPICE.