| 用1／f噪声表征MOSFET的负温偏不稳定性 |
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| 引用本文： | 庄奕琪,侯洵.用1／f噪声表征MOSFET的负温偏不稳定性[J].电子学报,1996,24(5):38-42. |
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| 作者姓名： | 庄奕琪 侯洵 |
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| 作者单位： | 西安电子科技大学微电子所，中国科学院西安光学精密机械研究所 |
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| 摘 要： | 负温偏不稳定性是ＭＯＳ顺件最重要的可靠问题之一。本文实验上发现ＭＯＳＦＥＴ的Ａ／ｆ噪声与其负温偏不稳定性相关，初始１／ｆ噪声谱密度正比于负温偏应力下的跨导退化量。
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| 关 键 词： | 1／f噪声 不稳定性 MOSFET 场效应器件 |
1/f Noise as a Tool to Characterize Negative Bias Instability in MOSFET |
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| Zhuang Yiqiand,Sun Qing.1/f Noise as a Tool to Characterize Negative Bias Instability in MOSFET[J].Acta Electronica Sinica,1996,24(5):38-42. |
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| Authors: | Zhuang Yiqiand Sun Qing |
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| Abstract: | It is found in experimment that 1/f noise is closely correlated with negative-bias instability in MOSFETs, which is one of the most important reliability problems for MOS devices.The initial noise spectrum density is proportional to the drift of transconductance of MOSFETs that are subjected to negative bias and high temperature. And, it is shown from the mechanism analysis that both the instability and the noise are induced by oxide charges and traps near Si-SiO2 interface. 1/f noise may therefore be used as an effective tool to predict and analyze negative-bias instability in MOS devices. |
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| Keywords: | f Noise Instability MOSFET Si-SiO_2 interface |
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