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PZT,PT干凝胶的制备及应用
引用本文:汪静,张良莹,姚熹.PZT,PT干凝胶的制备及应用[J].电子元件与材料,2004,23(12):20-21,24.
作者姓名:汪静  张良莹  姚熹
作者单位:同济大学功能材料研究所,上海,200092
基金项目:上海市重点学科建设项目,上海市科学技术发展基金资助项目(50073017)
摘    要:采用减压抽滤的方法成功制备了Pb(Zr0.5Ti0.5)O3,PbTiO3干凝胶,并用STA449C差热分析仪表征了干凝胶的性能。干凝胶溶解后得到了性能优良的PZT薄膜和PZT/PT复合膜。采用X射线衍射技术表征了两种薄膜的微观结构及成相特征。薄膜的介电性能及漏电流性能由HP4284ALCR及Keithley6517A来确定。试验结果表明:用减压抽滤得到的干凝胶的方法,可以彻底解决溶胶凝胶中先体存放的问题,得到的铁电薄膜有优良的介电与铁电性能。PZT的相对介电常数与介质损耗分别为424,0.033,PT作为中间层的复合膜的相对介电常数和介质损耗分别为261,0.014;PT薄膜可以调整和改进PZT薄膜的性能,使之达到应用于热释电探测器的要求。

关 键 词:无机非金属材料  干凝胶  PZT  PZT/PT  介电性能  漏电流性能
文章编号:1001-2028(2004)12-0020-02

Preparation and Application of PZT, PT Xerogel
WANG Jing,ZHANG Liang-ying,YAO Xi.Preparation and Application of PZT, PT Xerogel[J].Electronic Components & Materials,2004,23(12):20-21,24.
Authors:WANG Jing  ZHANG Liang-ying  YAO Xi
Abstract:Pb(Zr0.5Ti0.5)O3,PbTiO3 xerogel were prepared by removing volatile products under reduced pressure. The properties were checked by STA449C. PZT thin films and PZT/PT multilayer thin films were deposited on Pt/Ti/SiO2/Si substrates after xerogel were melted in ethylene glycol monomethyl ether. The crystalline structures were investigated using X-ray diffraction. Dielectric properties and leakage current characteristic were determined by HP4284A LCR meter and Keithlay 6517A. It is known that PZT, PT precursor can be saved in the form of xerogel for a long time. The ferroelectric thin films have excellent dielectric and ferroelectric properties. The dielectric constant and dielectric loss of PZT thin films are 424 and 0.033. However, the dielectric constant and dielectric loss of PZT5/PT5 decrease to 261, 0.014. PT buffer layers can improve the properties of PZT thin films.
Keywords:inorganic non-metallic materials  xerogel  PZT  PZT/PT  dielectric properties  leakage current characteristic
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