| ITO玻璃衬底上PLZT铁电薄膜的制备与电性能 |
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| 引用本文： | 刘国营,刘祖黎,柳擎,刘红日.ITO玻璃衬底上PLZT铁电薄膜的制备与电性能[J].电子元件与材料,2006,25(2):48-51. |
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| 作者姓名： | 刘国营 刘祖黎 柳擎 刘红日 |
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| 作者单位： | 1. 华中科技大学物理系,湖北,武汉,430074;湖北汽车工业学院理学部,湖北,十堰,442002
2. 华中科技大学物理系,湖北,武汉,430074 |
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| 摘 要： | 用sol-gel法在掺Sn的In2O3导电透明膜(ITO)衬底上,制备了La掺杂的PbZr0.5Ti0.5O3(PLZT)铁电薄膜。研究了La掺杂量对薄膜的铁电、介电和漏电性质的影响。结果表明,x(La)为5%的PLZT薄膜经650℃退火,有优良的铁电特性,外加15V电压下,剩余极化强度为35.4×10–6C/cm2,矫顽场强为111×103V/cm。100kHz时的εr和tgδ分别为984和0.13。在外加电场小于9V时,薄膜的漏电流密度不超过10–8A/cm2。
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| 关 键 词： | 无机非金属材料 PLZT铁电薄膜 掺锡氧化铟 sol-gel法 电学性质 |
| 文章编号： | 1001-2028（2006）02-0048-04 |
| 收稿时间： | 2005-09-23 |
| 修稿时间： | 2005-09-23 |
Deposition and Electrical Properties of PLZT Ferroelectric Thin Films on ITO Glass Substrate |
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| LIU Guo-ying,LIU Zu-li,LIU Qing,LIU Hong-ri.Deposition and Electrical Properties of PLZT Ferroelectric Thin Films on ITO Glass Substrate[J].Electronic Components & Materials,2006,25(2):48-51. |
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| Authors: | LIU Guo-ying LIU Zu-li LIU Qing LIU Hong-ri |
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| Abstract: | La-doped PbZr0.5Ti0.5O3(PLZT) ferroelectric thin films were prepared on Sn-doped In2O3(ITO) substrates by sol-gel process.The ferroelectric,dielectric and insulating properties of the deposited thin films with different La contents were investigated.The results show that at an applied electric field of 15 V,the remnant polarization Pr and coercive field Ec of the 5%(mole fraction) La-doped PLZT thin film sintered at 650℃ are 35.4×10–6 C/cm2 and 111×103 V/cm,respectively.At a frequency of 1 kHz,the dielectric constant and loss factor of the PLZT thin film are 984 and 0.07,respectively.The leakage current density of the PLZT film is no more than 10–8 A/cm2 at the applied voltage of 9 V. |
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| Keywords: | inorganic non-metallic materials PLZT ferroelectric thin films indium tin oxide sol-gel process electrical properties |
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