| 纳米晶FeCuNbSiB带材巨磁阻抗效应研究 |
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| 引用本文： | 张彬,曹莹,周勇,周志敏.纳米晶FeCuNbSiB带材巨磁阻抗效应研究[J].电子元件与材料,2009,28(2). |
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| 作者姓名： | 张彬 曹莹 周勇 周志敏 |
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| 作者单位： | 上海交通大学,微纳科学技术研究院,微米/纳米加工技术国家级重点实验室,薄膜与微细技术教育部重点实验室,上海,200240 |
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| 基金项目： | 国家高技术研究发展计划(863计划)，上海市科学技术委员会资助项目，重点实验室基金，基础科研资助项目 |
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| 摘 要： | 采用微机电系统(MEMS)技术,在玻璃基片上制备了单层结构500℃退火的FeCuNbSiB带材样品。在l～40MHz下,研究了带材的巨磁阻抗(GMI)效应随外加磁场强度以及交流电流频率的变化关系。结果表明:纵向、横向巨磁阻抗效应变化率(GMI值)在5MHz、1.2kA/m和5MHz、8kA/m时,分别达到最大值15.6%和10.6%。
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| 关 键 词： | 巨磁阻抗效应 纳米晶带材 微机电系统 |
Giant magneto-impedance effect in FeCuNbSiB nanocrystalline ribbons |
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| ZHANG Bin,CAO Ying,ZHOU Yong,ZHOU Zhimin.Giant magneto-impedance effect in FeCuNbSiB nanocrystalline ribbons[J].Electronic Components & Materials,2009,28(2). |
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| Authors: | ZHANG Bin CAO Ying ZHOU Yong ZHOU Zhimin |
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| Affiliation: | National Key Laboratory of Nano/Micro Fabrication Technology;Key Laboratory for Thin Film and Microfabrication of Ministry of Education;Institute of Micro & Nano Science & Technology;Shanghai Jiaotong University;Shanghai 200240;China |
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| Abstract: | The monolayer FeCuNbSiB ribbons samples annealed at 500 ℃ were prepared by MEMS technique on glass substrate. The dependence of GMI effect of the ribbon on applied magnetic field strength and AC current frequency was investigated in the frequency range of 1~40 MHz. The results show that the GMI values are 15.6% and 10.6% for AC current frequency of 5 MHz at a magnetic field strength of 1.2 kA/m and 8 kA/m with magnetic field applied along the longitudinal and transverse direction, respectively. |
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| Keywords: | giant magneto-impedance (GMI) effect nanocrystalline ribbon MEMS |
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