| B_2O_3掺杂对Ba_(0.6)Sr_(0.4)TiO_3/MgO陶瓷介电性能的影响 |
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| 引用本文： | 杨涛,吕文中,汪小红.B_2O_3掺杂对Ba_(0.6)Sr_(0.4)TiO_3/MgO陶瓷介电性能的影响[J].电子元件与材料,2006,25(8):16-18. |
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| 作者姓名： | 杨涛 吕文中 汪小红 |
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| 作者单位： | 华中科技大学电子科学与技术系,湖北,武汉,430074 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 采用XRD和SEM对B2O3掺杂Ba0.6Sr0.4TiO3/MgO(简称为BSTM)陶瓷致密化行为和介电性能进行了研究。结果表明:掺杂适量B2O3可明显降低BSTM陶瓷的烧结温度,在1480℃时即可烧结致密化,比未掺杂的BSTM陶瓷烧结温度降低70℃;掺杂量不同,则B2O3在陶瓷体中的存在形式不同,引起其介电性能相应变化;1480℃下烧结,B2O3掺杂量为0.8%(质量分数)时,10kHz下测得试样的εr为138,tanδ为0.0034,εr可调率达12.6%(3MV/m),性能有所提高。
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| 关 键 词： | 无机非金属材料 钛酸锶钡 氧化镁 氧化硼 铁电材料 相控阵天线 |
| 文章编号： | 1001-2028（2006）08-0016-03 |
| 收稿时间： | 2006-02-22 |
| 修稿时间： | 2006-02-22 |
Effect of B2O3 Dopant on Dielectric Properties of Ba0.6Sr0.4TiO3/MgO Ceramics |
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| YANG Tao,LU Wen-zhong,WANG Xiao-hong.Effect of B2O3 Dopant on Dielectric Properties of Ba0.6Sr0.4TiO3/MgO Ceramics[J].Electronic Components & Materials,2006,25(8):16-18. |
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| Authors: | YANG Tao LU Wen-zhong WANG Xiao-hong |
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| Affiliation: | Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China |
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| Abstract: | The effect of B2O3 dopant on the densification behavior and the dielectric properties of Ba0.6Sr0.4TiO3/MgO (in short, BSTM) ceramics was investigated. The results show that, the sintering temperature of appropriately B2O3-doped BSTM is effectively lowered 70℃ compared with that of undoped BSTM, and at 1 480℃ the ceramic is nearly fully densified ;different dopant contents cause different existing forms of B2O3 in the ceramics, resulting in change of the dielectric properties correspondingly; 0.8% (mass fraction) B2O3-doped BSTM sintered at 1 480℃ demonstrates the improved properties (10 kHz): εr=138, tanδ=0.003 4, T=12.6%(3 MV/m). |
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| Keywords: | inorganic non-metallic materials barium strontium titanate magnesia boron oxide ferroelectric material phased array antennas |
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