| 电子元件参数漂移的MΦItoft统计模型Mω |
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| 引用本文： | 胡恩平,罗兴柏,彭永怀.电子元件参数漂移的MΦItoft统计模型Mω[J].电子元件与材料,2001(1). |
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| 作者姓名： | 胡恩平 罗兴柏 彭永怀 |
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| 作者单位： | 军械工程学院!河北石家庄050003 |
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| 摘 要： | 参数漂移模型描述了元件参数从额定值发生偏移的行为。随着可靠性朝无故障寿命或无需维修工作周期的方向发展 ,对产品的参数漂移进行研究越来越显重要。利用 MΦ Itoft统计模型描述了电子元件的参数漂移行为 ,通过元件的早期寿命测试来预测元件寿命 ,并给出了应用实例
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| 关 键 词： | 电子元件 参数漂移 MΦItoft统计模型 |
MΦItoft statistical model for parametric drift of electronic components. |
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| HU En ping,LUO Xing bai,PENG Yong huai.MΦItoft statistical model for parametric drift of electronic components.[J].Electronic Components & Materials,2001(1). |
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| Authors: | HU En ping LUO Xing bai PENG Yong huai |
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| Abstract: | Parametric drift model describes behaviosr of components as they drift away from their nominal valuse. Study on parametric drift behavior is much more important as reliability is developing toward failure free or maintenance free operating. With MΦItoft statistical model, parametric drift behaviors of electronic components are described, and lifetime of components predicted on the basis of early life measurements. An example is given.(3 refs.) |
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| Keywords: | electronic component parametric drift wear out MΦItoft statistical model |
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