| 真空溅射制备PZT铁电薄膜 |
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| 引用本文： | 曾祥斌,白铁城,徐重阳.真空溅射制备PZT铁电薄膜[J].电子元件与材料,1998(4). |
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| 作者姓名： | 曾祥斌 白铁城 徐重阳 |
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| 作者单位： | 华中理工大学电子科学与技术系 |
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| 摘 要： | 采用射频溅射法制备了ＰＺＴ铁电薄膜材料，测量了薄膜材料的介电常数和电滞回线，分析了薄膜的成分。ＸＲＤ分析结果表明，溅射形成的ＰＺＴ薄膜的结构和铁电性能强烈依赖于成膜工艺中的衬底温度。薄膜的居里点为２５０℃左右，靶的组成以Ｐｂ１．１０（Ｚｒ０．５２Ｔｉ０．４８）Ｏ３为宜。
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| 关 键 词： | PZT薄膜 真空溅射 FRAM 电滞回线 |
The PZT ferroelectric thin film prepared by vacuum RF sputtering |
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| Abstract: | Pb_1.10 (Zr_0.52Ti_0.48)O_3 ferroelectric thin film is prepared by RF sputtering The electric permittivity and hysteresis loops are measured the composition of thin film is analyzed with XRD The results show that the structure and the ferroelectric properties of PZT thin film strongly depend on the substrate temperature The Curie point is about 250℃ The optimized composition for the target is Pb_1.10(Zr_0.52Ti_0.48)O_3(3 refs) |
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| Keywords: | PZT thin film vacuum sputtering FRAM hysteresis loop |
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