| 溶胶–凝胶法制备 Pb(Zrx, Ti1–x)O3 薄膜研究进展 |
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| 引用本文： | 王锡彬,熊 杰,郭 培,朱 聪,陶伯万.溶胶–凝胶法制备 Pb(Zrx, Ti1–x)O3 薄膜研究进展[J].电子元件与材料,2012(7):70-75. |
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| 作者姓名： | 王锡彬 熊 杰 郭 培 朱 聪 陶伯万 |
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| 作者单位： | （电子科技大学 电子薄膜与集成器件国家重点实验室;四川 成都 610054） |
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| 基金项目： | 国家自然科学基金资助项目（No. 50902017）基金项目：国家自然科学基金资助项目（No. 50902017） |
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| 摘 要： | Pb(Zrx, Ti1-x) (PZT)铁电薄膜因具有优良的铁电性、压电性、热释电性和声光性能而受到广泛关注，其电、光性能与其制备过程密切相关。简要介绍了 PZT 薄膜制备工艺流程，系统地从前驱体溶液、摩尔比 r(Zr:Ti)、热处理工艺、电极材料以及掺杂改性等五个方面概述了 sol-gel 法制备 PZT 薄膜的研究进展，并指出了目前 sol-gel 法制备 PZT 铁电薄膜研究中存在的一些问题以及未来的研究方向。
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| 关 键 词： | Pb(Zrx Ti1–x)O3 铁电薄膜 综述 sol-gel法 |
Research progress of Pb(Zrx,Ti1-x)O3 thin films prepared by sol-gel method |
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| WANG Xibin,XIONG Jie,GUO Pei,ZHU Cong,TAO Bowan.Research progress of Pb(Zrx,Ti1-x)O3 thin films prepared by sol-gel method[J].Electronic Components & Materials,2012(7):70-75. |
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| Authors: | WANG Xibin XIONG Jie GUO Pei ZHU Cong TAO Bowan |
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| Affiliation: | (State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | Pb(Zrx,Ti1-x)O3 ferroelectric thin films have attracted fully interest due to its excellent ferroelectricity,piezoelectricity,pyroelectricity,acoustic and optical properties.The electrical and optical properties of the films are closely related to its preparation process.The process flow of PZT thin films is introduced.The research progress of preparation of PZT thin films by sol-gel technique is reviewed from those aspects of precursor solution,mole ratio r(Zr:Ti),heat treatment process,electrode materials and doping modification.Some existing problems now in the research of preparation of PZT thin films by sol-gel method and the research directions in the future are predicted. |
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| Keywords: | Pb(Zrx Ti1-x)O3 ferroelectric thin films review sol-gel method |
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