Effect of trap location and trap-assisted Auger recombination onsilicon solar cell performance

Model calculations were performed to investigate and quantify the effect of trap location and trap-assisted Auger recombination on silicon solar cell performance. Trap location has a significant influence on the lifetime behavior as a function of doping and injected carrier concentration in silicon. It Is shown in this paper that for a high quality silicon (τ=10 ms at 200 ohm-cm, no intentional doping), high resistivity (⩾200 ohm-cm) is optimum for high efficiency one sun solar cells if the lifetime limiting trap is located near midgap. However, if the trap is shallow (E_t-E_v⩽0.2 eV), the optimum resistivity shifts to about 0.2 ohm-cm. For a low quality silicon material or technology (10 μs at 200 ohm-cm, prior to intentional doping) the optimum base resistivity for one sun solar cells is found to be ~0.2 ohm-cm, regardless of the trap location. It is shown that the presence of a shallow trap can significantly degrade the performance of a concentrator cell fabricated on high-resistivity high-lifetime silicon material because of an undesirable injection level dependence in the carrier lifetime. The effect of trap assisted Auger recombination on the cell performance has also been modelled in this paper. It is found that the trap-assisted Auger recombination does not influence the one sun cell performance appreciably, but can degrade the concentrator cell performance if the trap-assisted Auger recombination coefficient value exceeds 2×10^-14 cm³/s. Therefore, it is necessary to know the starting lifetime as well as trap location in order to specify base resistivity in order to predict or achieve the best cell performance for a given one sun or concentrator cell design