Electrical characterization of high purity InGaAsP alloys |
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| Authors: | J L Benchimol D Scalbert} M Quillec |
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| Affiliation: | (1) C.N.E.T. Laboratoire de Bagneux, 196 rue de Paris, 92220 Bagneux, FRANCE;(2) Present address: Groupe de Physique des Solides de l’Ecole Normale Supérieure, Université Paris VII, 20 place Jussieu, 75007 Paris, France |
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| Abstract: | InxGa1-xAsyP1-y layers grown by liquid phase epitaxy on InP substrates were characterized by Hall effect between 4 and 300K. The thermal
activation energy of donor impurities was estimated from the temperature dependence of the free electron concentration ; it
was found to increase with phosphorus concentration from less than 1meV in InGaAs to about 2.5meV in InP. Evidence for impurity
conduction was also observed in some samples at the lowest temperatures. The mobility analysis led to an estimation of the
alloy scattering potential in the whole range of compositions 0≤y≤l. At temperatures below 10K, we observed avalanche effect
due to impact ionization of electrons from shallow donor impurities into the conduction band. |
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| Keywords: | LPE InGaAsP InP activation energy electron mobility |
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