Room-Temperature Preparation of High-Transparency Low-Resistivity ITO Films by Ion Beam Sputtering |
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Authors: | Jung-Hsiung Shen Sung-Wei Yeh Dershin Gan Koho Yang Hsing-Lu Huang and Shih-Wei Mao |
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Affiliation: | (1) College of Materials Science and Engineering, Sichuan University, Chengdu, 610064, People’s Republic of China; |
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Abstract: | Low-temperature preparation of transparent conducting electrodes is essential for flexible optoelectronic devices. Tin-doped
In2O3 films with high transparency and low electrical resistance were prepared at room temperature using a radiofrequency ion beam
sputtering system. Specimens with a low sheet resistivity of 10−4 Ω cm and a high visible-light transmittance of 85% to 90% were obtained. Hall measurements were used to determine mobility
and carrier concentration, and the effects on resistivity are discussed. |
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