Investigation of structure and properties of nanocrystalline silicon on various buffer layers |
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| Authors: | C Y Lin Y K Fang S F Chen C S Lin T H Chou S B Hwang J S Hwang K I Lin |
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| Affiliation: | (1) VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 701 Tainan, Taiwan;(2) Department of Electrical Engineering, Cheinkuo Technology University, 500 Changhuo, Taiwan;(3) Department of Physics, National Cheng Kung University, 701 Tainan, Taiwan |
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| Abstract: | A comparative study of deposition nanocrystalline silicon (nc-Si) on various buffer layers is investigated. The nc-Si films
were deposited in a hot-wire chemical vapor deposition (CVD) system. Through Hall measurement, scanning electron microscopy
(SEM), atomic force microscope (AFM), Raman, and x-ray diffraction (XRD) analyses, it was found that the columnar grain (CG)
size, mobility, and volume fraction of crystalline-deposited nc-Si films increase with an increase of the buffer layers’ surface
roughness. The nc-Si film deposited on the nc-Si buffer layer possesses the highest Xc (volume fraction of crystalline) of
84.32%, Hall mobility of 45.9 (cm2/V s), and CG size of 200–220 nm, and it shows the strongest intensity of the XRD diffraction peak in (111). |
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| Keywords: | Nanocrystalline silicon hot-wire chemical vapor deposition (CVD) buffer layer columnar grain (CG) |
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