Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN |
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| Authors: | B Boudart S Trassaert X Wallart J C Pesant O Yaradou D Théron Y Crosnier H Lahreche F Omnes |
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| Affiliation: | (1) Institut d’Electronique et de Microélectronique du Nord, U.M.R.-C.N.R.S. 8520, Département Hyperfréquences et Semiconducteurs, Université des Sciences et Technologies de Lille, 59652 Villenueve D’Ascq Cedex, France;(2) Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, C.N.R.S., Parc de Sophia Antipolis, 06560 Valbonne, France |
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| Abstract: | We report a comparison between Ti/Al and Ti/Al/Ni/Au ohmic contacts in terms of contact resistivity, thermal stability, depth
profile, and surface morphology. The metals were deposited by conventional electron-beam evaporation, and then annealed at
900°C for 30 s in a N2 atmosphere. The lowest value for the specific contact resistivity was obtained using Ti/Al/Ni/Au metallization. Ti/Al/Ni/Au
contacts showed no increase in contact resistivity after aging for five days at 600°C in an air atmosphere. Examination of
the surface morphology using atomic force microscopy revealed that the surface roughness was clearly better in the case of
Ti/Al/Ni/Au contacts. X-ray photoelectron spectroscopy was also employed and gave primary results of Ti/Al/Ni/Au contact formation. |
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| Keywords: | GaN ohmic contacts XPS AFM aging tests |
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