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Avoiding trap states in poly(n-vinylcarbazole) thin films
Authors:KAS Araujo  PSS Guimarães  LA Cury  L Akcelrud  D Sanvitto  M De Giorgi  M Valadares  HDR Calado
Affiliation:1. Departamento de Física, Instituto de Ciências, Exatas, Universidade Federal de Minas Gerais, 31270-901 Belo Horizonte, Minas Gerais, Brazil;2. Laboratório de Polímeros Paulo Scarpa (LaPPS), Departamento de Química, Universidade Federal do Paraná, 81531-990 Curitiba, Paraná, Brazil;3. National Nanotechnology Laboratory, Istituto Nanoscienze – CNR, Via Arnesano, 73100 Lecce, Italy;4. Departamento de Física, Centro de Ciências, Exatas e Tecnológicas, Universidade Federal de Viçosa, 36570-000 Viçosa, Minas Gerais, Brazil;5. Departamento de Química, Instituto de Ciências Exatas, Universidade Federal de Minas Gerais, 31270-901 Belo Horizonte, Minas Gerais, Brazil
Abstract:Optical properties of poly(n-vinylcarbazole) (PVK) thin films are revisited. Steady-state emission spectra put in evidence a strong red band whose intensity increases with decreasing temperature when the solid state PVK film is excited by a continuous 375 nm laser line. This red band is assigned to the emission from PVK aggregate states which act as trap states for the monomeric PVK triplet high energy (blue) excitons. At the same low temperatures, these trap states can be avoided when the excitation of the PVK film is made by a 355 nm pulsed laser line with 10 Hz repetition rate. The red band was also observed to compete with the emission of guest poly(3-octadecylthiophene) (PODT) molecules in a PVK/PODT sequential bilayer structure. Different optical geometries enabled us to show that the exciton energy transfer effect from PVK donor to PODT acceptor states dominates the scenario in the bilayer structure, suppressing almost completely the trap state emissions.
Keywords:Triplet trap states  PVK  Aggregates  Exciton energy transfer  PVK/PODT adjacent bilayer
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