Top-gate organic field-effect transistors fabricated on paper with high operational stability |
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| Affiliation: | 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, PR China;2. Co-Innovation Center for Micro/nano Optoelectronic Materials and Devices, Chongqing University of Arts and Sciences, Chongqing 402160, PR China;1. Department of Physics, Institute of Advance Materials, Institute of Research and Continuing Education (Shenzhen), Hong Kong Baptist University, Kowloon Tong, Hong Kong;2. School of Physical Science and Technology, Southwest University, Chongqing 400715, China;3. Department of Chemistry, Hong Kong Baptist University, Kowloon Tong, Hong Kong;1. Department of Physics, Faculty of Art and Science, Batman University, Batman, Turkey;2. Department of Physics, Faculty of Science, Anadolu University, Eskisehir 26470, Turkey;1. POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;2. School of Chemical Engineering and Materials Science, Chung-Ang University, Seoul 156-756, Republic of Korea;3. Department of Nano, Medical and Polymer Materials, Yeungnam University, Gyeongsan 712-749, Republic of Korea |
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| Abstract: | We report on top-gate organic field-effect transistors (OFETs) fabricated on specialty paper, PowerCoat? HD 230 from Arjowiggins Creative Papers coated with a buffer layer composed of a polyvinyl alcohol (PVA) and polyvinylpyrrolidine (PVP) blend. OFETs operate at low voltages and display average carrier mobility values of 1.7 ± 1.1 × 10?1 cm2/Vs, average threshold voltage values of ?1.4 ± 0.2 V, and average on/off current ratio of 105. OFETs also display excellent operational stability demonstrated by stable 1000 scans of the transfer characteristics and by stable on-currents displaying less than 6% change during a DC bias stress test at VDS = VGS = ?10 V for 1 h. Furthermore, OFETs on paper display a decrease of only 7% in their on-state current during a bending test. The performance of these OFETs on paper is comparable to that displayed by top-gate OFETs with the same geometry fabricated on glass substrates. |
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| Keywords: | Organic field-effect transistors Top-gate geometry Paper Operational stability Flexibility |
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