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RF Power Amplifier Behavioral Modeling Based on Takenaka–Malmquist–Volterra Series
Authors:Ricardo Schumacher  Eduardo G Lima  Gustavo H C Oliveira
Affiliation:1.Department of Electrical Engineering,Federal University of Paraná (UFPR),Curitiba,Brazil
Abstract:In this paper, a Takenaka–Malmquist–Volterra (TMV) model structure is employed to improve the approximations in the low-pass equivalent behavioral modeling of radio frequency (RF) power amplifiers (PAs). The Takenaka–Malmquist basis generalizes the orthonormal basis functions previously used in this context. In addition, it allows each nonlinearity order in the expanded Volterra model to be parameterized by multiple complex poles (dynamics). The state-space realizations for the TMV models are introduced. The pole sets for the TMV model and also for the previous Laguerre–Volterra (LV) and Kautz–Volterra (KV) models are obtained using a constrained nonlinear optimization approach. Based on experimental data measured on a GaN HEMT class AB RF PA excited by a WCDMA signal, it is observed that the TMV model reduces the normalized mean-square error and the adjacent channel error power ratio for the upper adjacent channel (upper ACEPR) by 1.6 dB when it is compared to the previous LV and KV models under the same computational complexity.
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