| Si/GaAs晶圆片键合热应力及其影响因素分析 |
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| 引用本文： | 仇寻,郭祥虎,王典,孙利杰,施祥蕾.Si/GaAs晶圆片键合热应力及其影响因素分析[J].半导体光电,2016,37(6):813-817,845. |
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| 作者姓名： | 仇寻 郭祥虎 王典 孙利杰 施祥蕾 |
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| 作者单位： | 上海空间电源研究所,上海,200245;西安电子科技大学电子装备结构教育部重点实验室,西安,710071 |
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| 基金项目： | 上海市青年科技启明星计划项目(14QB1402800) |
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| 摘 要： | 分别利用Suhir双金属带热应力分布理论和有限元法研究了Si/GaAs晶圆片键合界面在退火过程中的热应力分布,并将热应力分布理论计算结果与有限元分析结果进行了对比验证,得到了一致的结论.根据计算分析结果,对晶圆片进行了结构热变形分析,并研究了不同因素对键合热应力的影响,提出了减小键合热应力的有效措施.
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| 关 键 词： | Si/GaAs 键合 热应力 有限元法 影响因素 |
| 收稿时间： | 2016/2/26 0:00:00 |
Analysis of Si/GaAs Wafer Bonding Thermal Stresses and Effect Factors |
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| QIU Xun,GUO Xianghu,WANG Dian,SUN Lijie,SHI Xianglei.Analysis of Si/GaAs Wafer Bonding Thermal Stresses and Effect Factors[J].Semiconductor Optoelectronics,2016,37(6):813-817,845. |
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| Authors: | QIU Xun GUO Xianghu WANG Dian SUN Lijie SHI Xianglei |
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| Abstract: | The thermal stresses of Si/GaAs wafer bonding were investigated by using both Suhir bimetal strip stress distribution model and the finite element method. Comparations show that similar results can be obtained from the two ways, from which, the thermal structure deformation and the factors which influence the bonding thermal stresses were analyzed respectively, and the ways for reducing the thermal stresses were discussed. |
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| Keywords: | Si/GaAs bonding thermal stress finite element method effect factor |
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