| Si/Si直接键合界面的FTIR和XPS研究 |
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| 引用本文： | 陈松岩,谢生,何国荣.Si/Si直接键合界面的FTIR和XPS研究[J].半导体光电,2004,25(5):372-375. |
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| 作者姓名： | 陈松岩 谢生 何国荣 |
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| 作者单位： | 厦门大学,物理系,福建,厦门,361005;厦门大学,物理系,福建,厦门,361005;厦门大学,物理系,福建,厦门,361005 |
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| 摘 要： | 通过新颖的键合方法实现了Si/Si直接键合.采用傅里叶红外透射谱(FTIR)对Si/Si键合界面进行了研究,结果表明,高温退火样品的界面组分为Si和O,无OH和H网络存在.X射线光电子谱(XPS)测试结果进一步表明,界面主要为单质Si和SiOx混合网络,且随着退火温度的升高,界面层Si-Si直接成键的密度也越高.
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| 关 键 词： | 硅 直接键合 红外透射谱 X射线光电子谱 |
| 文章编号： | 1001-5868(2004)04-0372-04 |
| 修稿时间： | 2003年12月22日 |
FTIR and XPS Analysis of Directly Bonded Si/Si Interface |
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| CHEN Song-yan,XIE Sheng,HE Guo-rong.FTIR and XPS Analysis of Directly Bonded Si/Si Interface[J].Semiconductor Optoelectronics,2004,25(5):372-375. |
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| Authors: | CHEN Song-yan XIE Sheng HE Guo-rong |
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| Abstract: | The Si/Si direct bonding has been achieved by a new bonding technology. Fourier transform infrared spectrum(FTIR) and X-ray photoelectron spectroscopy(XPS) are used to analyze the interface of Si/Si bonding. The results show that there are notinfrared absorbtion peak related to the Si-H bonding and Si-OH bonding in the interface at high temperature, and the interface is consisted of Si and SiO_x. In addition, the research indicates also that the Si/Si bonding density is increased with the increase of bonding temperature. |
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| Keywords: | silicon direct bonding FTIR XPS |
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