Effect of Discharge Power in a Plasma during Reactive-Ion Etching of Massive Substrates on the Matching of the Lower Electrode with a High-Frequency Bias Generator |
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| Authors: | Poletayev S D |
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| Affiliation: | 1.Institute of Image Processing Systems, Branch of the Federal Research Center Crystallography and Photonics, Russian Academy of Sciences, 443001, Samara, Russia
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| Abstract: | Russian Microelectronics - The influence of the discharge power in plasma during the reactive-ion etching of massive substrates on the matching of the lower electrode with a high-frequency bias... |
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