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预烧温度对0.363BiScO3-0.637PbTiO3高温压电陶瓷性能的影响
引用本文:刘珩,周桃生,姜丹,尚勋忠,张蕾,何云斌.预烧温度对0.363BiScO3-0.637PbTiO3高温压电陶瓷性能的影响[J].压电与声光,2011,33(1).
作者姓名:刘珩  周桃生  姜丹  尚勋忠  张蕾  何云斌
作者单位:湖北大学,材料科学与工程学院,功能材料绿色制备与应用教育部重点实验室,湖北,武汉,430062
基金项目:湖北省教育厅重点基金资助项目(D20081008); 湖北省自然科学基金资助项目(2008CDB277,2008CDB249)
摘    要:研究了不同预烧温度对反应烧结0.363BiScO3-0.637PbTi O3陶瓷的微观结构及压电介电性能的影响。根据0.363BiScO3-0.637PbTi O3的配方,通过热失重-差热分析判断Sc2O3、Bi2O3、Pb3O4、Ti O2粉末混合物分解、化合反应点和预烧温度范围;运用XRD、SEM研究了不同预烧温度下制备陶瓷样品的微观结构;通过压电介电性能测试,确定出最佳预烧工艺条件。结果表明,最佳的预烧条件为740℃保温2 h。经1 080℃、2 h烧成陶瓷的压电常数d33=308 pC/N,机电耦合系数kp=0.437,介电常数ε3T3/ε0=1 560,介电损耗tanδ=0.021,退极化温度TD=460℃。在此工艺条件下,该陶瓷性能优良、制备重复性好,在高温压电陶瓷传感器、换能器等方面显示出实用化前景。

关 键 词:高温压电陶瓷  BiScO3-PbTiO3  预烧温度  压电介电性能  高温压电换能器  

Effect of the Calcination Temperature on Properties of High Temperature0.363BiScO3-0.637PbTiO3 Piezoelectric Ceramics
LIU Heng,ZHOU Taosheng,JIANG Dan,SHANG Xunzhong,ZHANG Lei,HE Yunbin.Effect of the Calcination Temperature on Properties of High Temperature0.363BiScO3-0.637PbTiO3 Piezoelectric Ceramics[J].Piezoelectrics & Acoustooptics,2011,33(1).
Authors:LIU Heng  ZHOU Taosheng  JIANG Dan  SHANG Xunzhong  ZHANG Lei  HE Yunbin
Affiliation:LIU Heng,ZHOU Taosheng,JIANG Dan,SHANG Xunzhong,ZHANG Lei,HE Yunbin(Key Lab.of Ministry of Education for the Green Preparation and Application of Functional Materials,Faculty of Materials Science and Engineering,Hubei University,Wuhan 430062,China)
Abstract:In the present study,the effect of the calcination temperature on the microstructure,dielectric and piezoelectric properties of the reactively sintered 0.363BiScO3-0.637PbTiO3 ceramics were investigated.The ceramics were prepared using the conventional solid-state reaction processing.The decomposition and synthesis behavior of the mixed powders of Sc2O3,Bi2O3,Pb3O4,and TiO2 was investigated by TG-DTA to pre-determine the calcination temperature range.The microstructure of the ceramics prepared with varying ...
Keywords:high-temperature piezoelectric ceramics  BiScO3-PbTiO3  calcination temperature  piezoelectric and dielectric properties  high-temperature piezoelectric transducer  
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