| 激光制备多层薄膜及铁电性能的研究 |
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| 引用本文： | 李兴教,安承武.激光制备多层薄膜及铁电性能的研究[J].压电与声光,1997,19(1):54-56,60. |
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| 作者姓名： | 李兴教 安承武 |
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| 作者单位： | [1]华中理工大学固体电子学系 [2]华中理工大学激光技术国家重点实验室 |
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| 基金项目： | 国家自然科学基金,激光技术国家实验室开放基金 |
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| 摘 要： | 利用脉冲准分子激光淀积（ＰＬＤ）方法，在Ｓｉ基片上制备了ＢＩＴ／Ｓｉ〔１００〕、ＰＺＴ／ＢＩＴ／Ｓｉ〔１００〕和ＢＩＴ／ＰＺＴ／ＢＩＴ／Ｓｉ〔１００〕铁电薄膜。用ＸＲＤ分析了多层铁电薄膜的晶相结构；用Ｓａｗｙｅｒ－Ｔｏｗｅｒ电路研究了这些单层和多层铁电薄膜的铁电性能。结果表明，单层ＢＩＴ的矫顽场Ｅｃ为４ｋＶ／ｃｍ，剩余极化强度为３．４μＣ／ｃｍ２；ＰＺＴ／ＢＩＴ的矫顽场Ｅｃ为８２ｋＶ／ｃｍ，剩余极化强度Ｐｒ为３６μＣ／ｃｍ２；ＢＩＴ／ＰＺＴ／ＢＩＴ夹层铁电薄膜的矫顽场Ｅｃ为５７ｋＶ／ｃｍ，剩余极化强度Ｐｒ为２９μＣ／ｃｍ２。最后讨论了薄膜的铁电性能与多层结构的关系
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| 关 键 词： | PLD方法 铁电薄膜 铁电性能 |
Preparation and Ferroelectric Characteristics of Multilayer Thin Films |
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| Li Xingjiao,Zhao Jianhong.Preparation and Ferroelectric Characteristics of Multilayer Thin Films[J].Piezoelectrics & Acoustooptics,1997,19(1):54-56,60. |
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| Authors: | Li Xingjiao Zhao Jianhong |
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| Abstract: | Ferroelectric BIT,PZT/BIT and BIT/PZT/BIT thin films were successfully deposited on Si(100) substrates by pulsed excimer laser.The crystallization of these thin films were characterized using XRD.The ferroelectricity of these thin films were measured using Sawyer Tower circuits.The relationship between ferroelectricity and multilayer structures was discussed. |
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| Keywords: | PLD method multilayer ferroelectric film ferroelectricity |
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