| 基于MOSFET设计优化的功率驱动电路 |
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| 引用本文： | 李小艳,武振宁,李方军.基于MOSFET设计优化的功率驱动电路[J].电子元器件应用,2012(11):17-18,24. |
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| 作者姓名： | 李小艳 武振宁 李方军 |
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| 作者单位： | 西安电子工程研究所,西安710100 |
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| 摘 要： | 在分析了功率MOSFET结构特性的基础上，讨论驱动电路的设计，从而优化MOSFET的驱动性能，提高设计的可靠性。
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| 关 键 词： | MOSFET 急聚点 损耗 |
Based on the MOSFET design optimization of power drive circuit |
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| LI Xiao-yan,WU Zhen-ning,LI Fang-jun.Based on the MOSFET design optimization of power drive circuit[J].Electronic Component & Device Applications,2012(11):17-18,24. |
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| Authors: | LI Xiao-yan WU Zhen-ning LI Fang-jun |
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| Affiliation: | (Xi＇an Institute of electronic engineering, Xi＇an 710100) |
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| Abstract: | the analysis of the power of MOSFET and its structure characteristics on the basis of discussion, driver circuit design, so as to optimize MOSFET driving performance, improve the reliability of the design. |
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| Keywords: | MOSFET sharp point loss |
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