| 应变层InGaAsP量子阱激光器结构的调制光谱研究 |
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| 引用本文： | 金鹏,李成明,张子旸,孟宪权,徐波,刘峰奇,王占国,李乙钢,张存洲,潘士宏.应变层InGaAsP量子阱激光器结构的调制光谱研究[J].微纳电子技术,2003,40(3):11-13,32. |
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| 作者姓名： | 金鹏 李成明 张子旸 孟宪权 徐波 刘峰奇 王占国 李乙钢 张存洲 潘士宏 |
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| 作者单位： | 1. 中国科学院半导体研究所,半导体材料科学重点实验室,北京,100083
2. 南开大学物理科学学院,天津,300071 |
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| 摘 要： | 利用光调制反射谱(PR)对1.55μm应变层InCaAsP三量子阱激光器结构进行了研究,在样品的波导层观察到了Franz-Keldysh振荡。利用Bastard包络函数方法和Kane模型从理论上计算了该应变层InGaAsP四元合金三量子阱内电子和空穴的能级和跃迁能量,计算结果与实验数据符合得很好,得到了In_(0.758)Ga_(0.242)As_(0.83)P_(0.17)与In_(0.758)Ga_(0.242)As_(0.525)P_(0.475)四元合金应变界面的导带不连续性。
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| 关 键 词： | InGaAsP量子阱激光器 调制光谱 Franz-Keldysh振荡 |
| 文章编号： | 1671-4776(2003)03-0011-03 |
Photoreflectance study of strained InGaAsP quantum-well laser structure |
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| JIN Peng,LI Cheng-ming,ZHANG Zi-yang,MENG Xian-quan,XU Bo,LIU Feng-qi,WANG Zhan-guo,LI Yi-gang,ZHANG Cun-zhou,PAN Shi-hong.Photoreflectance study of strained InGaAsP quantum-well laser structure[J].Micronanoelectronic Technology,2003,40(3):11-13,32. |
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| Authors: | JIN Peng LI Cheng-ming ZHANG Zi-yang MENG Xian-quan XU Bo LIU Feng-qi WANG Zhan-guo LI Yi-gang ZHANG Cun-zhou PAN Shi-hong |
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| Abstract: | Photoreflectance (PR) has been employed to study the 1.55 uuuuum strained-layer InGaAsP triple-quantum-well laser structure. Franz-Keldysh oscillations (FKOs) from the waveguide layer of the laser structure have been found. The experimental optical transitions from the quantum-well active region are consistent well with the theoretical results calculated by utilizing the Bastard's method and the Kane's model. The interface band-offset of In0.758Ga0.242As0.83P0.17 and In0.758Gao0.242As0.525P0.475 has also been obtained. |
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| Keywords: | InGaAsP quantum well laser modulation spectroscopy Franz-Keldysh oscillation |
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