激光定域晶化技术制备纳米硅的研究

利用相移光栅模板使KrF准分子激光形成强度周期分布的激光束,定域晶化a-Si∶H(4nm)/a-SiNx∶H(10nm)多层膜中的超薄a-Si∶H层,成功地制备出了三维有序分布的nc-Si阵列。原子力显微镜(AFM)、微区喇曼光谱、剖面透射电子显微镜(X-TEM)及高分辨电子显微镜(HREM)技术分析揭示了晶化后薄膜中形成了横向周期与移相光栅周期相同、纵向周期与a-Si∶H/a-SiNx∶H多层膜周期(14nm)相等的nc-Si阵列。

Fabrication of nc-Si array made by pulsed laser constrained interference crystallization

Fabrication of nc-Si and ordered nc-Si array is a key for the development and applica-tion of nc-Si in Nano-technology and modern microelectronics industry.We proposed a new method,the combination of KrF excimer pulsed laser and phase shift grating,to crystallize the a-Si∶H(4nm)/a-SiN x ∶H(10nm)multilayers(MLs )and tempted to fabricate three-dimensional ordered Si array.The crystallinity,morphology and microstructure of the laser interference crystallized samples are observed by Raman scattering,transmission electron microscopy(TEM),high resolution elec-tron microscopy(HREM)and atomic force microscopy(AFM).These measurements clearly demonstrate that a three-dimensional ordered structure of nc-Si ,which has longitudinal order with14nm periodicity confined by SiN x sublayers in the MLs and lateral order with2μm periodicity by patterned local crystallization,can be precisely fabricated by the method used in this paper.