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| 不对称势垒对共振隧穿二极管I-V特性的影响 | |
| 引用本文： | 武一宾,杨瑞霞,商耀辉,牛晨亮,王健.不对称势垒对共振隧穿二极管I-V特性的影响[J].微纳电子技术,2010,47(11). |
| 作者姓名： | 武一宾 杨瑞霞 商耀辉 牛晨亮 王健 |
| 作者单位： | 1. 河北工业大学,信息工程学院,天津,300130;中国电子科技集团公司,第十三研究所,石家庄,050051 2. 河北工业大学,信息工程学院,天津,300130 3. 中国电子科技集团公司,第十三研究所,石家庄,050051 |
| 摘 要： | 利用Airy函数和传输矩阵方法计算了不对称势垒厚度的InP基AlAs/InGaAs/AlAs DBS结构在偏压情况下的共振透射系数,并通过材料生长和器件工艺制作得到了共振隧穿二极管的直流I-V特性。在峰值电流密度为132kA/cm2下,获得了17.84的电流峰谷比。测试结果还表明不对称势垒厚度的RTD在偏压情况下,当电子从较薄势垒向较厚势垒穿透时,更容易获得高的电流峰谷比,反之可获得较大的负微分电阻电压区域。 |
| 关 键 词： | 不对称势垒 共振隧穿二极管(RTD) 电流峰谷比(PVCR) 负微分电阻(NDR) 分子束外延(MBE) 磷化铟 |
Effect of Asymmetric Barriers on I-V Characteristics of Resonant Tunnel Diodes |
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| Wu Yibin,Yang Ruixia,Shang Yaohui,Niu Chenliang,Wang Jian.Effect of Asymmetric Barriers on I-V Characteristics of Resonant Tunnel Diodes[J].Micronanoelectronic Technology,2010,47(11). | |
| Authors: | Wu Yibin Yang Ruixia Shang Yaohui Niu Chenliang Wang Jian |
| Affiliation: | Wu Yibin1,2,Yang Ruixia1,Shang Yaohui2,Niu Chenliang2,Wang Jian2(1.School of Information Engineering,Hebei University of Technology,Tianjin 300130,China,2.The 13th Research Institute,CETC,Shijiazhuang 050051,China) |
| Abstract: | The transmission coefficients of InP-base AlAs/InGaAs/AlAs double barrier structures(DBS)with asymmetric thickness barriers were calculated with the bias voltage by Airy function formulism and transmission matrix methods,and the DC I-V characteristics of the resonant tunnel diode(RTD)were gotten by MBE and device processes.The peak-to-valley current ratio(PVCR)is 17.84 when the peak current density reaches 132 kA/cm2.The measurement results also show that higher PVCR for the RTD with asymmetric thickness ba... |
| Keywords: | asymmetric barriers resonant tunnel diode(RTD) PVCR NDR MBE InP |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |
